Imaging element and electronic apparatus

ABSTRACT

An imaging device includes a first pixel group including first photoelectric conversion regions, and at least one first color filter on the first photoelectric conversion regions. The imaging device includes a second pixel group including second photoelectric conversion regions, and at least one second color filter on the second photoelectric conversion regions. The imaging device includes a dummy region between the first pixel group and the second pixel group in a first direction so that a first side of the dummy region is adjacent to the first pixel group and a second side of the dummy region is adjacent to the second pixel group.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Japanese Priority PatentApplication JP2018-228642 filed Dec. 6, 2018, the entire contents ofwhich are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to an imaging element and an electronicapparatus including the imaging element.

BACKGROUND ART

The applicant has proposed an imaging element having a “Quadra”arrangement in which a plurality of pixel groups including four pixelsis arranged in a Bayer arrangement (refer to PTL 1, for example). Thefour pixels are arranged in a two row-by-two column square arrangement,and one color filter of the same color as that of the four pixels isprovided for the four pixels.

CITATION LIST Patent Literature

[PTL 1] Japanese Unexamined Patent Application Publication No.2018-098344

SUMMARY Technical Problem

Such an imaging element is expected to have higher resolution.

Solution to Problem

An imaging element according to an embodiment of the present disclosureincludes a plurality of first pixel groups, a plurality of second pixelgroups, a plurality of third pixel groups, and a plurality of fourthpixel groups. Each of the plurality of first pixel group includes aplurality of first pixels arranged in a two-dimensional array of m firstpixels in a first direction and m first pixels in a second direction,where the m is a natural number of two or more. Each of the plurality ofsecond pixel groups includes a plurality of second pixels arranged in atwo-dimensional array of m second pixels in the first direction and msecond pixels in the second direction. The second pixel groups and thefirst pixel groups are alternately arranged in the first direction. Eachof the plurality of third pixel groups includes a plurality of thirdpixels arranged in a two-dimensional array of m third pixels in thefirst direction and m third pixels in the second direction. The thirdpixel groups and the first pixel groups are alternately arranged in thesecond direction. Each of the plurality of fourth pixel groups includesa plurality of fourth pixels arranged in a two-dimensional array of mfourth pixels in the first direction and m fourth pixels in the seconddirection. The fourth pixel groups and the third pixel groups arealternately arranged in the first direction, and the fourth pixel groupsand the second pixel groups are alternately arranged in the seconddirection. Herein, dimensions in the first direction of the first pixelgroups, the second pixel groups, the third pixel groups, and the fourthpixel group are all substantially equal to a first dimension, anddimensions in the second direction of the first pixel groups, the secondpixel groups, the third pixel groups, and the fourth pixel groups areall substantially equal to a second dimension. The first dimension isrepresented by X, and the second dimension is represented by Y. Thefirst pixel groups and the second pixel groups alternately adjacent toeach other in the first direction are shifted from each other by [Y/n]in the second direction, where the n is a natural number of two or more.The first pixel groups and the third pixel groups alternately adjacentto each other in the second direction are shifted from each other by[X/n] in the first direction. The third pixel groups and the fourthpixel groups alternately adjacent to each other in the first directionare shifted from each other by [Y/n] in the second direction. The secondpixel groups and the fourth pixel groups alternately adjacent to eachother in the second direction are shifted from each other by [X/n] inthe first direction.

An imaging device according to an embodiment of the present disclosureincludes a first pixel group including first photoelectric conversionregions, and at least one first color filter on the first photoelectricconversion regions. The imaging device includes a second pixel groupincluding second photoelectric conversion regions, and at least onesecond color filter on the second photoelectric conversion regions. Theimaging device includes a dummy region between the first pixel group andthe second pixel group in a first direction so that a first side of thedummy region is adjacent to the first pixel group and a second side ofthe dummy region is adjacent to the second pixel group.

The dummy region is a same size as one pixel in the first pixel group orthe second pixel group. The dummy region does not have a color filter.The dummy region is an infrared detection region that detects infraredlight, a phase difference detection region that detects a phasedifference, or a distance detection region that detects distance. Thesecond pixel group is offset from the first pixel group in a seconddirection perpendicular to the first direction. The second pixel groupis offset from the first pixel group by a distance X/n, where X is adimension of the first pixel group in the first direction and n is anatural number of at least two. The first pixel group includes a first2×2 array of pixels, and the second pixel group includes a second 2×2array of pixels. The imaging device includes a third pixel groupadjacent to a third side of the dummy region. The third pixel groupincludes third photoelectric conversion regions, and at least one thirdcolor filter on the third photoelectric conversion regions. The imagingdevice includes a fourth pixel group adjacent to a fourth side of thedummy region. The fourth pixel group includes fourth photoelectricconversion regions, and at least one fourth color filter on the fourthphotoelectric conversion regions. The first, second, third, and fourthpixel groups are arranged such that the dummy region is surrounded bythe first, second, third, and fourth pixel groups. The at least onethird color filter and the at least one fourth color filter pass a samerange of wavelengths of light. The first side and the second side of thedummy region are opposite sides, and the third side and the fourth sideof the dummy region are opposite sides. Each pixel in the first, second,third, and fourth pixel groups includes a memory and a floatingdiffusion coupled to the memory. The imaging device includes anisolation region between each pixel in the first and second pixelgroups. The first photoelectric conversion regions and the secondphotoelectric conversion regions are disposed in a substrate, and theisolation region penetrates a first surface of the substrate and issurrounded by a portion of the substrate having a different conductivitytype than the first and second photoelectric conversion regions. Animaging device according to an embodiment of the present disclosureincludes a dummy pixel, a first pixel group, a second pixel group, athird pixel group, and a fourth pixel group, where the first, second,third, and fourth pixel groups surround the dummy pixel. Each of thefirst, second, third, and fourth pixel groups includes a 2×2 array ofpixels. Each pixel group has a respective color filter that passesgreen, red, or blue light. The dummy pixel does not have a color filter.The imaging device includes a substrate including photoelectricconversion regions of each pixel, a memory disposed in the substrate,and a wiring layer on one side of the substrate and including at leastone transistor coupled to the memory. An imaging device according to anembodiment of the present disclosure includes a plurality of pixelgroups, and a plurality of dummy regions interspersed amongst theplurality of pixel groups such that each side of each dummy region isadjacent to one pixel in each pixel group.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the technology, and are incorporated in and constitutea part of this specification. The drawings show illustrative embodimentsand, together with the specification, serve to explain variousprinciples of the technology.

FIG. 1 is a block diagram illustrating an entire configuration exampleof a function of an imaging element according to an embodiment of thepresent disclosure.

FIG. 2 is a circuit diagram illustrating a circuit configuration of onepixel group in the imaging element illustrated in FIG. 1.

FIG. 3 is a plan view of a planar configuration example of a pixel arrayunit in the imaging element illustrated in FIG. 1.

FIG. 4 is a cross-sectional view of a cross-sectional configuration ofone pixel group in the imaging element illustrated in FIG. 1.

FIG. 5 is a plan view of a planar configuration example of a pixel arrayunit according to a first modification example of the presentdisclosure.

FIG. 6 is a plan view of a planar configuration example of a pixel arrayunit according to a second modification example of the presentdisclosure.

FIG. 7 is a plan view of a planar configuration example of a pixel arrayunit according to a third modification example of the presentdisclosure.

FIG. 8 is a plan view of a planar configuration example of a pixel arrayunit according to a fourth modification example of the presentdisclosure.

FIG. 9 is a schematic view of an entire configuration example of anelectronic apparatus including the imaging element according to theembodiment of the present disclosure.

FIG. 10 is a block diagram depicting an example of schematicconfiguration of a vehicle control system.

FIG. 11 is a diagram of assistance in explaining an example ofinstallation positions of an outside-vehicle information detectingsection and an imaging section.

FIG. 12 is a partial cross-sectional view of a cross-sectionalconfiguration example of a portion of a pixel array unit according to afifth modification example of the present disclosure.

FIG. 13 is a partial cross-sectional view of a cross-sectionalconfiguration example of a pixel array unit according to a sixthmodification example of the present disclosure.

FIG. 14 is a partial cross-sectional view of a cross-sectionalconfiguration example of a portion of a pixel array unit according to aseventh modification example of the present disclosure.

FIG. 15 is a plan view of a planar configuration example of a pixelarray unit as a reference example.

FIG. 16 is a circuit diagram illustrating a circuit configuration of apixel array unit according to an eighth modification example of thepresent disclosure.

FIG. 17 is a partial cross-sectional view of a cross-sectionalconfiguration example of a portion of the pixel array unit according tothe eighth modification example of the present disclosure.

DESCRIPTION OF EMBODIMENTS

Some embodiments of the present disclosure are described in detail belowwith reference to the drawings. It is to be noted that description isgiven in the following order.

1. Embodiment

An example of an imaging element in which relative positions of aplurality of pixel groups arranged in a “Quadra” arrangement are shiftedby a predetermined amount in a vertical direction and a horizontaldirection

2. Modification Examples of Embodiment

(2.1) First Modification Example: an example in which a white pixel isprovided in a gap region surrounded by the plurality of pixel groups(2.2) Second Modification Example: an example in which a near-infraredlight detection pixel is provided in the gap region surrounded by theplurality of pixel groups(2.3) Third Modification Example: an example in which an image planephase detection pixel is provided in the gap region of the plurality ofpixel groups(2.4) Fourth Modification Example: an example in which adistance-measuring pixel is provided in the gap region of the pluralityof pixel groups

3. Application Example to Electronic Apparatus 4. Further ApplicationExample to Mobile Body 5. Other Modification Examples 1. EmbodimentConfiguration of Solid-State Imaging Element 101

FIG. 1 is a block diagram illustrating a configuration example of afunction of a solid-state imaging element (or imaging device) 101according to an embodiment of the present disclosure.

The solid-state imaging element 101 includes, for example, a so-calledglobal shutter system back-illuminated image sensor a such as acomplementary metal oxide semiconductor (CMOS) image sensor. Thesolid-state imaging element 101 receives light from an object, andperforms photoelectric conversion on the light to generate an imagesignal, thereby capturing an image.

The global shutter system indicates a system in which global exposure isperformed. In the global exposure, basically, exposure of all pixelssimultaneously starts and simultaneously ends. Herein, all pixelsindicates all pixels in a portion appearing in an image, and exclude adummy pixel and any other pixel. Moreover, in a case where a timedifference and image distortion is small enough not to cause an issue,the global shutter system encompasses a system in which while globalexposure of pixels is performed in units of two or more rows, forexample, in units of several tens of rows instead of simultaneouslyperforming exposure of all pixels, a region where the global exposure isperformed moves. Further, the global shutter system also encompasses asystem in which global exposure of pixels in a predetermined region isperformed, instead of exposure of all pixels in a portion appearing inan image.

The back-illuminated image sensor indicates an image sensor having aconfiguration in which a photoelectric converter such as a photodiode isprovided between a light reception surface and a wiring layer. Thephotodiode receives light from an object and converts the light into anelectrical signal. The light from the object enters the light receptionsurface. The wiring layer includes wiring such as a transistor thatdrives each pixel.

The solid-state imaging element 101 includes, for example, a pixel arrayunit 111, a vertical driver 112, a column signal processor 113, a datastorage unit 119, a horizontal driver 114, a system controller 115, anda signal processor 118.

In the solid-state imaging element 101, the pixel array unit 111 isprovided on a semiconductor substrate 11 to be described later.Peripheral circuits such as the vertical driver 112, the column signalprocessor 113, the data storage unit 119, the horizontal driver 114, thesystem controller 115, and the signal processor 118 are provided, forexample, on the semiconductor substrate 11 where the pixel array unit111 is provided.

The pixel array unit 111 includes a plurality of sensor pixels 110 eachincluding a photoelectric converter (PD) 51 to be described later. ThePD 51 generates a charge corresponding to an amount of light incidentfrom an object, and accumulates the charge. The sensor pixels 110 arearranged along a horizontal direction, i.e., a row direction and avertical direction, i.e., a column direction, as illustrated in FIG. 1.In the pixel array unit 111, pixel drive lines 116 are wired along therow direction with respective pixel rows each including the sensorpixels 110 arranged in one line in the row direction, and verticalsignal lines (VSLs) 117 are wired along the column direction withrespective pixel columns each including the sensor pixels 110 arrangedin one line in the column direction.

The vertical driver 112 includes a shift register, an address decoder,and any other component. The vertical driver 112 supplies, for example,a signal to the plurality of sensor pixels 110 through a plurality ofpixel drive lines 116 to drive all the plurality of sensor pixels 110 inthe pixel array unit 111 simultaneously or on a pixel row-by-pixel rowbasis.

The vertical driver 112 inputs a drive signal S58 to a dischargingtransistor (OFG) 58 to be described later to turn on the OFG 58, therebycausing conduction between the PD 51 to be described later in each ofthe sensor pixels 110 and a power source VDD2. As a result, anunnecessary charge is discharged from the PD 51. Such an operation isreferred to as “reset”. Thereafter, the vertical driver 112 inputs thedrive signal S58 to the OFG 58 to turn off the OFG 58, which makes itpossible to start exposure of each of the sensor pixels 110. After thestart of the exposure, the vertical driver 112 inputs the drive signalS58 to a first transfer transistor (TG) 52A to turn the TG 52A from onto off, which makes it possible to transfer a charge generated andaccumulated in the PD 51 to a charge holding unit (MEM) 59 to bedescribed later. The exposure ends upon completion of transfer of thecharge from the PD 51 to the MEM 59.

Herein, an OFF operation of the OFG 58 and an OFF operation of the TG52A are performed simultaneously on all the sensor pixels 110 in thepixel array unit 111. Hence, exposure of all the sensor pixels 110 inthe pixel array unit 111 starts simultaneously, and ends simultaneously.

Signals outputted from respective unit pixels in a pixel row selectedand scanned by the vertical driver 112 are supplied to the column signalprocessor 113 through the respective VSLs 117. The column signalprocessor 113 performs predetermined signal processing on the signalsoutputted from the respective unit pixels in the selected row throughthe VSLs 117 on a pixel column-by-pixel column basis, and temporarilyholds pixel signals having been subjected to the signal processing.

Specifically, the column signal processor 113 includes, for example, ashift register, an address decoder, and any other component, andperforms processing such as noise removal, correlated double sampling,and analog-to-digital (A/D) conversion of an analog pixel signal togenerate a digital pixel signal. The column signal processor 113supplies the thus-generated pixel signal to the signal processor 118.

The horizontal driver 114 includes a shift register, an address decoder,and any other component, and sequentially selects unit circuitscorresponding to pixel columns of the column signal processor 113. Thepixel signals having been subjected to the signal processing in therespective unit circuits in the column signal processor 113 aresequentially outputted to the signal processor 118 by selection andscanning by the horizontal driver 114.

The system controller 115 includes a timing generator and any othercomponent. The timing generator generates various kinds of timingsignals. The system controller 115 performs driving control of thevertical driver 112, the column signal processor 113, and the horizontaldriver 114 on the basis of the timing signals generated by the timinggenerator.

The signal processor 118 performs signal processing such as operationalprocessing on the pixel signals supplied from the column signalprocessor 113 to output an image signal including the respective pixelsignals, while temporarily storing data in the data storage unit 119 asnecessary.

In the signal processing by the signal processor 118, the data storageunit 119 temporarily holds data necessary for the signal processing.

Configuration of Sensor Pixel 110

Circuit Configuration Example

Next, description is given of a circuit configuration example of thesensor pixel 110 provided in the pixel array unit 111 in FIG. 1 withreference to FIG. 2. FIG. 2 illustrates a circuit configuration exampleof one sensor pixel 110 of the plurality of sensor pixels 110 includedin the pixel array unit 111.

In the example illustrated in FIG. 2, the sensor pixel 110 in the pixelarray unit 111 implements a memory-holding type global shutter. Thesensor pixel 110 includes power sources VDD1 and VDD2, the PD 51, the TG52A, a second transfer transistor (TG) 52B, a charge-to-voltageconverter (FD) 53, a reset transistor (RST) 54, an amplificationtransistor (AMP) 55, a select transistor (SEL) 56, the OFG 58, and theMEM 59.

In this example, each of the TGs 52A and 52B, the RST 54, the AMP 55,the SEL 56, and the OFG 58 includes an N-type MOS transistor. Drivesignals S52A, S52B, S54, S56, and S58 are respectively supplied to gateelectrodes of TGs 52A and 52B, the RST 54, SEL 56, and the OFG 58 by thevertical driver 112 and the horizontal driver 114 on the basis ofdriving control by the system controller 115. Moreover, a drive signalS55 is supplied from the FD 53 in the sensor pixel 110 to the gateelectrode of the AMP 55. Each of the drive signals S52A, S52B, S54, S55,S56, and S58 serves as a pulse signal in which a high level stateindicates an active state (an ON state) and a low level state indicatesan inactive state (an OFF state). It is to be noted that hereinafter,turning the drive signal to the active state is also referred to“turning on the drive signal”, and turning the drive signal to theinactive state is also referred to as “turning off the drive signal”.

The PD 51 includes, for example, a photoelectric conversion elementincluding a PN-junction photodiode. The PD 51 receives light from anobject and generates a charge corresponding to an amount of the receivedlight by photoelectric conversion and accumulates the charge.

The MEM 59 is disposed between the PD 51 and the FD 53. In order toachieve a global shutter function, the MEM 59 serves as a region wherethe charge generated and accumulated in the PD 51 is temporarily storeduntil the charge is transferred to the FD 53.

The TG 52A is disposed between the PD 51 and the MEM 59, and the TG 52Bis disposed between the MEM 59 and the FD 53. The TG 52A transfers thecharge accumulated in the PD 51 to the MEM 59 in accordance with thedrive signal S52A applied to the gate electrode of the TG 52A. The TG52B transfers the charge temporarily stored in the MEM 59 to the FD 53in accordance with the drive signal S52B applied to the gate electrodeof the TG 52B. In the sensor pixel 110, for example, the drive signalS52A is turned off to turn off the TG 52A and the drive signal S52B isturned on to turn on the TG 52B, which causes the charge stored in theMEM 59 to be transferred to the FD 53 through the TG 52B.

The RST 54 includes a drain coupled to the power source VDD1 and asource coupled to the FD 53. The RST 54 initializes, that is, resets theFD 53 in accordance with the drive signal S54 applied to the gateelectrode of the RST 54. For example, the drive signal S54 is turned onto turn on the RST 54, which causes a potential of the FD 53 to be resetto a voltage level of the power source VDD1. In other words,initialization of the FD 53 is performed.

The FD 53 serves as a floating diffusion region that converts the chargetransferred from the PD 51 through the TG 52A, the MEM 59, and the TG52B into an electrical signal, for example, a voltage signal, andoutputs the electrical signal. The FD 53 is coupled to the RST 54, andis coupled to the VSL 117 through the AMP 55 and the SEL 56.

The AMP 55 outputs the electrical signal corresponding to the potentialof the FD 53. The AMP 55 configures a source-follower circuit with aconstant current source provided in the column signal processor 113, forexample. In a case where the sensor pixel 110 is selected, the SEL 56 isturned on, and outputs the electrical signal transferred from the FD 53through the AMP 55 to the column signal processor 113 through the VSL117.

The sensor pixel 110 further includes, in addition to the FD 53, thepower source VDD2 as a transfer destination of the charge of the PD 51.The OFG 58 is disposed between the PD 51 and the power source VDD2.

The OFG 58 includes a drain coupled to the power source VDD2 and asource coupled to wiring that couples the TG 52A and the PD 51 to eachother. The OFG 58 initializes, that is, resets the PD 51 in accordancewith the drive signal S58 applied to the gate electrode of the OFG 58.Resetting PD 51 means depleting the PD 51.

Moreover, the OFG 58 forms an overflow path between the TG 52A and thepower source VDD2 to discharge a charge overflowed from the PD 51 to thepower source VDD2. Thus, in the sensor pixel 110 according to thepresent embodiment, it is possible for the OFG 58 to directly reset thePD 51.

(Planar Configuration Example of Pixel Array Unit 111)

Next, description is given of a planar configuration example and across-sectional configuration example of the pixel array unit 111 inFIG. 1 with reference to FIG. 3. FIG. 3 is a schematic plan view of aplanar configuration example of a portion of the pixel array unit 111.

As illustrated in FIG. 3, the pixel array unit 111 of the solid-stateimaging element 101 includes, for example, a plurality of pixel groupsof four kinds, i.e., a plurality of first pixel groups G1, a pluralityof second pixel groups G2, a plurality of third pixel groups G3, and aplurality of fourth pixel groups G4. Each of the plurality of firstpixel groups G1 includes a plurality of first pixels 1 arranged in atwo-dimensional array of m first pixels in an X-axis direction (or Xdirection) and the m first pixels 1 in a Y-axis direction (orY-direction), where m is a natural number of two or more. Each of thefirst pixels 1 corresponds to the sensor pixel 110 described in FIGS. 1and 2. It is to be noted that FIG. 3 and other diagrams illustrate acase of m=2 as an example, and description is given of the case of m=2in the present embodiment. Accordingly, each of the plurality of firstpixel groups G1 includes four first pixels 1A to 1D arranged in a tworow-by-two column square arrangement. Likewise, each of the plurality ofsecond pixel groups G2 includes a plurality of second pixels 2 arrangedin a two-dimensional array of m second pixels 2 in the X-axis directionand m second pixels 2 in the Y-axis direction, and includes, forexample, four second pixels 2A to 2D arranged in a two row-by-two columnsquare arrangement, as illustrated in FIG. 3. Each of the second pixels2 corresponds to the sensor pixel 110 described in FIGS. 1 and 2.Likewise, each of the plurality of third pixel groups G3 includes aplurality of third pixels 3 arranged in a two-dimensional array of mthird pixels 3 in the X-axis direction and m third pixels 3 in theY-axis direction, and includes, for example, four third pixels 3A to 3Darranged in a two row-by-two column square arrangement, as illustratedin FIG. 3. Each of the third pixels 3 corresponds to the sensor pixel110 described in FIGS. 1 and 2. Likewise, each of the plurality offourth pixel groups G4 includes a plurality of fourth pixels 4 arrangedin a two-dimensional array of m fourth pixels 4 in the X-axis directionand m fourth pixels in the Y-axis direction, and includes, for example,four fourth pixels 4A to 4D arranged in a two row-by-two column squarearrangement, as illustrated in FIG. 3. Each of the fourth pixels 4corresponds to the sensor pixel 110 described in FIGS. 1 and 2.

In the pixel array unit 111, dimensions X in the X-axis direction of thefirst pixel groups G1, the second pixel groups G2, the third pixelgroups G3, and the fourth pixel groups G4 are all substantially equal toa first dimension X, and dimensions in the Y-axis direction of the firstpixel groups G1, the second pixel groups G2, the third pixel groups G3,and the fourth pixel groups G4 are all substantially equal to a seconddimension. Herein, specifically, the first dimension X and the seconddimension Y are preferably substantially equal to each other, that is,X=Y is preferable. It is to be noted that the X-axis directioncorresponds to a specific but non-limiting example of a “firstdirection” in an embodiment of the present disclosure, and the Y-axisdirection corresponds to a specific but non-limiting example of a“second direction” in an embodiment of the present disclosure.

In the pixel array unit 111, the first to fourth pixel groups G1 to G4are arranged in a “Quadra” arrangement. In other words, in the X-axisdirection, the first pixel groups G1 and the second pixel groups G2 arealternately arranged, and the third pixel groups G3 and the fourth pixelgroups G4 are alternately arranged. Note that the first pixel groups G1and the second pixel groups G2 alternately adjacent to each other in theX-axis direction are shifted from each other by [Y/n] in the Y-axisdirection, where n is a natural number of two or more. Likewise, thethird pixel groups G3 and the fourth pixel groups G4 alternatelyadjacent to each other in the X-axis direction are shifted from eachother by [Y/n] in the Y-axis direction. It is to be noted that FIG. 3illustrates a case of n=2 as an example. Accordingly, in the example inFIG. 3, the first pixel groups G1 and the second pixel groups G2 arearranged alternately adjacent to each other to be displaced from eachother by [Y/2] in a −Y direction along a +X direction. Moreover, thethird pixel groups G3 and the fourth pixel groups G4 are arrangedalternately adjacent to each other to be displaced from each other inthe −Y direction by [Y/2] toward the +X direction.

In the pixel array unit 111, as illustrated in FIG. 3, in the Y-axisdirection, the first pixel groups G1 and the third pixel groups G3 arealternately arranged, and the second pixel groups G2 and the fourthpixel groups G4 are alternately arranged. Note that the first pixelgroups G1 and the third pixel groups G3 alternately adjacent to eachother in the Y-axis direction are shifted from each other by [X/n] inthe X-axis direction, where n is a natural number of two or more.Likewise, the second pixel groups G2 and the fourth pixel groups G4alternately adjacent to each other in the Y-axis direction are shiftedfrom each other by [X/n] in the X-axis direction. It is to be noted thatFIG. 3 illustrates a case of n=2 as an example. Accordingly, in theexample in FIG. 3, the first pixel groups G1 and the third pixel groupsG3 are arranged alternately adjacent to each other to be displaced fromeach other by [X/2] in the +X direction toward a +Y direction. Moreover,the second pixel groups G2 and the fourth pixel groups G4 are arrangedalternately adjacent to each other to be displaced from each other by[X/2] in the +X direction toward the +Y direction.

Herein, the pixel array unit 111 according to the present embodiment iscompared with, for example, a pixel array unit 111Z as a referenceexample illustrated in FIG. 15. In the pixel array unit 111Z as thereference example illustrated in FIG. 15, the first to fourth pixelgroups G1 to G4 are straightly arranged along the X-axis direction andthe Y-axis direction without being shifted. As compared with the pixelarray unit 111Z as the reference example illustrated in FIG. 15, in thepixel array unit 111, for example, in a case where attention is focusedon a certain pixel group (for example, the first pixel group G1), otherpixel groups (for example, two second pixel groups G2 and two thirdpixel groups G3) are moved by X/n or Y/n toward a clockwise directionwith the certain pixel group as a center. Accordingly, in the pixelarray unit 111, one gap region (or dummy region, or dummy pixel) GRsurrounded by the first pixel group G1, the second pixel group G2, thethird pixel group G3, and the fourth pixel group G4 is present for everyfour pixel groups. The gap region (or dummy region, or dummy pixel) GRmay be a region of the pixel array unit 111 that is not used to sensecolor (e.g., R, G, or B), and thus, may not include a color filter andis not part of the Quadra arrangement that includes pixel groups G1 toG4. The gap region (or dummy region, or dummy pixel) GR may have a samesize as one pixel in the groups G1 to G4 or may have a different size,according to design preferences. In at least one example embodiment, thegap region (or dummy region, or dummy pixel) GR is an infrared detectionregion that detects infrared light, a phase difference detection regionthat detects a phase difference, or a distance detection region thatdetects distance. Thus, the gap region (or dummy region, or dummy pixel)GR may have no color filter or a color filter other than an R, G, or Bcolor filter such as, a gray color filter or a clear color filter. Asshown, the pixel group G1 is offset from the pixel group G4 in the Xdirection, the pixel group G2 is offset from the pixel group G3 in the Ydirection. Thus, the first, second, third, and fourth pixel groups G1 toG4 are arranged such that the gap region (or dummy region, or dummypixel) GR is surrounded by the first, second, third, and fourth pixelgroups G1 to G4 in a plan view. Said another way, a plurality of gapregions (or dummy regions, or dummy pixels) GR are interspersed amongstthe plurality of pixel groups G1 s, G2 s, G3 s, and G4 s such that eachside of each gap region (or dummy region, or dummy pixel) GR is adjacentto one pixel in each pixel group G1 to G4.

Moreover, in the pixel array unit 111, both the first pixels 1 and thefourth pixels 4 detect green light (G) as a first color, the secondpixels 2 detect red light (R) as a second color, and the third pixels 3detect blue light (B) as a third color. Accordingly, colors of the firstto fourth pixel groups G1 to G4 are arranged in a Bayer arrangement.

(Cross-Sectional Configuration Example of Pixel Array Unit 111)

Next, description is given of a cross-sectional configuration example ofthe pixel array unit 111 in FIG. 1 with reference to FIG. 4. FIG. 4 is across-sectional view of a configuration example of a cross sectionpassing through the first pixel group G1 and the second pixel group G2adjacent to each other in the X-axis direction. The cross section inFIG. 4 corresponds to a cross section taken in a direction of an arrowalong a line Iv-Iv in FIG. 3. It is to be noted that the first to fourthpixel groups G1 to G4 have substantially a same configuration, exceptthat the colors of the color filters CF in the first to fourth pixelgroups G1 to G4 are different.

As illustrated in FIG. 4, each of the sensor pixels 110, that is, eachof the first pixels provided in the first pixel group G1 and the secondpixels 2 provided in the second pixel group G2 includes thesemiconductor substrate 11, a wiring layer 12, the color filter CF (CF1or CF2), and an on-chip lens LNS (LNS1 or LNS2).

The semiconductor substrate 11 includes, for example, a monocrystalsilicon substrate. The semiconductor substrate 11 has a back surface 11Band a front surface 11A on a side opposite to the back surface 11B. Theback surface 11B serves as a light reception surface that receives lightfrom an object having passed through the on-chip lens LNS and the colorfilter CF.

The PD 51 is provided in the semiconductor substrate 11. The PD 51 hasan N-type semiconductor region 51A and an N-type semiconductor region51B in order from a position close to the back surface 11B, for example.Light having entered the back surface 11B is subjected to photoelectricconversion in the N-type semiconductor region 51A to generate a charge,and thereafter, the charge is accumulated in the N-type semiconductorregion 51B. It is to be noted that a boundary between the N-typesemiconductor region 51A and the N-type semiconductor region 51B is notnecessarily clear, and, for example, it is sufficient if theconcentration of an N-type impurity is gradually increased from theN-type semiconductor region 51A to the N-type semiconductor region 51B.

The element separator (or isolation region) 13 is further provided inthe semiconductor substrate 11. The element separator 13 includes awall-shaped member that extends in a Z-axis (or Z direction) directionto penetrate through the semiconductor substrate 11 at a boundaryposition between adjacent ones of the sensor pixels 110, and surroundseach of the PDs 51. The adjacent ones of the sensor pixels 110 areelectrically separated from each other by the element separator 13. Theelement separator 13 includes, for example, an insulation material suchas silicon oxide. The semiconductor substrate 11 may further have aP-type semiconductor region 14 between the element separator 13 and eachof the PDs 51. The P-type semiconductor region 14 is provided along aside surface of the element separator 13.

A fixed charge film 15 is provided to cover the back surface 11B, andhas a negative fixed charge to suppress generation of a dark currentcaused by an interface state of the back surface 11B serving as thelight reception surface of the semiconductor substrate 11. A holeaccumulation layer is provided near the back surface 11B of thesemiconductor substrate 11 by an electric field induced by the fixedcharge film 15. The hole accumulation layer suppresses generation ofelectrons from the back surface 11B.

The color filter CF is provided on the fixed charge film 15. Any otherfilm such as an antireflection film and a planarization film may beinterposed between the color filter CF and the fixed charge film 15. Itis to be noted that in the first pixel group G1, for example, one colorfilter CF1 is provided for four first pixels 1 (1A to 1D). Likewise, inthe second pixel group G2, one color filter CF2 is provided for foursecond pixels 2 (2A to 2D). In the third pixel group G3, one colorfilter CF3 is provided for four third pixels 3 (3A to 3D). In the fourthpixel group G4, one color filter CF4 is provided for four fourth pixels4 (4A to 4D). In the present embodiment, the colors of the color filterCF1 and the color filter CF4 are green, the color of the color filterCF2 is red, and the color of the color filter CF3 is blue.

The on-chip lens LNS is located on a side opposite to the fixed chargefilm 15 as viewed from the color filter CF, and is provided in contactwith the color filter CF. In the first pixel group G1, one on-chip lensLNS1 is provided for four first pixels 1 (1A to 1D) to cover all thelight reception surfaces of the four first pixels 1. Likewise, in thesecond pixel group G2, one on-chip lens LNS2 is provided for four secondpixels 2 (2A to 2D) to cover all the light reception surfaces of thefour second pixels 2. In the third pixel group G3, one on-chip lens LNS3is provided for four third pixels 3 (3A to 3D) to cover all the lightreception surfaces of the four third pixels 3. In the fourth pixel groupG4, one on-chip lens LNS4 is provided for four fourth pixels 4 (4A to4D) to cover all the light reception surfaces of the four fourth pixels4.

The wiring layer 12 is provided to cover the front surface 11A of thesemiconductor substrate 11, and includes the TG 52A, the TG 52B, the MEM59, and any other component included in a pixel circuit of the sensorpixel 110 illustrated in FIG. 2. A surface, on a side opposite to thefront surface 11A, of the wiring layer 12 is covered with an insulationlayer 18.

Workings and Effects of Solid-State Imaging Element 101

As described above, in the solid-state imaging element 101 according tothe present embodiment, relative positions of pixels groups of two kinds(for example, the first pixel groups G1 and the second pixel groups G2)alternately arranged in the X-axis direction are shifted from each otherby a predetermined amount (Y/n) in the Y-axis direction. Moreover,relative positions of pixels groups of two kinds (for example, the firstpixel groups G1 and the third pixel groups G3) alternately arranged inthe Y-axis direction are shifted from each other by a predeterminedamount (X/n) in the X-axis direction. This makes it possible to shortenan arrangement pitch in the X-axis direction and an arrangement pitch inthe Y-axis direction of the pixel groups in the pixel array unit 111.

Herein, the pixel array unit 111 according to the present embodiment iscompared with the pixel array unit 111Z as the reference exampleillustrated in FIG. 15, for example. In the pixel array unit 111Z, alongthe X-axis direction, the first pixel groups G1 and the second pixelgroups G2 are alternately arranged, and the third pixel groups G3 andthe fourth pixel groups G4 are alternately arranged. Moreover, in thepixel array unit 111Z, along the Y-axis direction, the first pixelgroups G1 and the third pixel groups G3 are alternately arranged, andthe second pixel groups G2 and the fourth pixel groups G4 arealternately arranged. On this occasion, in the pixel array unit 111Z, aninterval Px between two first pixel groups located closest to each otherin the X-axis direction is represented by Px=X*2. In other words, in thepixel array unit 111Z, in a case where four first pixels 1 included inthe first pixel group G1 are added to output an image, an output pitchPx of the first pixel group G1 in the X-axis direction is represented byPx=X*2. Moreover, in the pixel array unit 111Z, an interval Py betweentwo first pixel groups G1 located closest to each other in the Y-axisdirection is represented by Py=Y*2. In other words, in the pixel arrayunit 111Z, in the case where four first pixels 1 included in the firstpixel group G1 are added to output an image, an output pitch Py of thefirst pixel group G1 in the Y-axis direction is represented by Py=Y*2.It is to be noted that in the pixel array unit 111Z illustrated in FIG.15, a difference in output among pixels in one pixel group is caused by,for example, a displacement in an XY plane between the on-chip lens LNSand the PD 51 and color mixture resulting from light obliquely enteringthe on-chip lens LNS. Hence, in some cases, it is difficult to achievehigher resolution while maintaining image quality.

In contrast, in the pixel array unit 111 according to the presentembodiment, as illustrated in FIG. 3, for example, the interval Pxbetween two first pixel groups G1 located closest to each other in theX-axis direction is represented by Px=X*1. In other words, in the pixelarray unit 111, in a case where four first pixels 1 included in thefirst pixel group G1 are added to output an image, the output pitch Pxof the first pixel group G1 in the X-axis direction is represented byPx=X*1, which is equal to the dimension X in the X-axis direction of onefirst pixel group G1. Moreover, in the pixel array unit 111, theinterval Py between two first pixel groups G1 located closest to eachother in the Y-axis direction is represented by Py=Y*1. In other words,in the case where four first pixels 1 included in the first pixel groupG1 are added to output an image, the output pitch Py of the first pixelgroup G1 in the Y-axis direction is represented by Py=Y*1, which isequal to the dimension Y in the Y-axis direction of one first pixelgroup G1. Accordingly, in the pixel array unit 111 according to thepresent embodiment, it is possible to double resolution in the X-axisdirection and resolution in the Y-axis direction, as compared with thepixel array unit 111Z as the reference example.

2. Modification Examples of Embodiment

(2.1)

FIG. 5 is a schematic plan view of an entire configuration example of apixel array unit 111A according to a first modification example of theembodiment of the present disclosure. In the pixel array unit 111A, awhite pixel 5 is provided in the gap region GR. In a solid-state imagingelement that includes the pixel array unit 111A having such aconfiguration, it is possible to achieve higher sensitivity whileachieving higher resolution.

(2.2)

FIG. 6 is a schematic plan view of an entire configuration example of apixel array unit 111B according to a second modification example of theembodiment of the present disclosure. In the pixel array unit 111B, anear-infrared light detection pixel 6 is provided in the gap region GR.In a solid-state imaging element that includes the pixel array unit 111Bhaving such a configuration, it is possible to detect near-infraredlight while achieving higher resolution.

(2.3)

FIG. 7 is a schematic plan view of an entire configuration example of apixel array unit 111C according to a third modification example of theembodiment of the present disclosure. In the pixel array unit 111C, animage plane phase detection pixel 7 is provided in the gap region GR. Ina solid-state imaging element that includes the pixel array unit 111Chaving such a configuration, it is possible to detect a focal point ofan object while achieving higher resolution.

(2.4)

FIG. 8 is a schematic plan view of an entire configuration example of apixel array unit 111D according to a fourth modification example of theembodiment of the present disclosure. In the pixel array unit 111D, adistance-measuring pixel 8 is provided in the gap region GR. In asolid-state imaging element that includes the pixel array unit 111Dhaving such a configuration, it is possible to detect a distance to anobject while achieving higher resolution.

3. Application Example to Electronic Apparatus

FIG. 9 is a block diagram illustrating a configuration example of acamera 2000 as an electronic apparatus to which the technology accordingto an embodiment of the present disclosure is applied.

The camera 2000 includes an optical unit 2001, an imaging device 2002,and a digital signal processor (DSP) circuit 2003. The optical unit 2001includes a lens group and any other component. The foregoing imagingelement 101 or any other imaging element (hereinafter referred to as“the solid-state imaging element 101, etc.”) is applied to the imagingdevice 2002. The DSP circuit 2003 serves as a camera signal processingcircuit. Moreover, the camera 2000 includes a frame memory 2004, adisplay unit 2005, a recording unit 2006, an operation unit 2007, and apower source unit 2008. The DSP circuit 2003, the frame memory 2004, thedisplay unit 2005, the recording unit 2006, the operation unit 2007, andthe power source unit 2008 are coupled to one another through a bathline 2009.

The optical unit 2001 takes light (image light) incident from an object,and forms an image of the light on an imaging surface of the imagingdevice 2002. The imaging device 2002 converts an amount of the light ofwhich the image is formed on the imaging surface by the optical unit2001 into an electrical signal on a pixel-by-pixel basis, and outputsthe electrical signal as a pixel signal.

The display unit 2005 includes, for example, a panel display device suchas a liquid crystal panel and an organic electroluminescence (EL) panel,and displays a moving image or a still image captured by the imagingdevice 2002. The recording unit 2006 records the moving image or thestill image captured by the imaging device 2002 on a recording mediumsuch as a hard disk and a semiconductor memory.

The operation unit 2007 provides an instruction for operation of variousfunctions of the camera 2000 under an operation by a user. The powersource unit 2008 appropriately supplies various kinds of power servingas operation power of the DSP circuit 2003, the frame memory 2004, thedisplay unit 2005, the recording unit 2006, and the operation unit 2007to the DSP circuit 2003, the frame memory 2004, the display unit 2005,the recording unit 2006, and the operation unit 2007.

As described above, it is expectable to obtain a favorable image withuse of the foregoing solid-state imaging element 101, etc. as theimaging device 2002.

4. Further Application Example to Mobile Body

The technology according to an embodiment of the present disclosure(present technology) is applicable to various products. For example, thetechnology according to an embodiment of the present disclosure may beachieved in the form of an apparatus to be mounted to a mobile body ofany kind. Non-limiting examples of the mobile body include anautomobile, an electric vehicle, a hybrid electric vehicle, amotorcycle, a bicycle, any personal mobility device, an airplane, anunmanned aerial vehicle (drone), a vessel, and a robot.

FIG. 10 is a block diagram depicting an example of schematicconfiguration of a vehicle control system as an example of a mobile bodycontrol system to which the technology according to an embodiment of thepresent disclosure can be applied.

The vehicle control system 12000 includes a plurality of electroniccontrol units connected to each other via a communication network 12001.In the example depicted in FIG. 10, the vehicle control system 12000includes a driving system control unit 12010, a body system control unit12020, an outside-vehicle information detecting unit 12030, anin-vehicle information detecting unit 12040, and an integrated controlunit 12050. In addition, a microcomputer 12051, a sound/image outputsection 12052, and a vehicle-mounted network interface (I/F) 12053 areillustrated as a functional configuration of the integrated control unit12050.

The driving system control unit 12010 controls the operation of devicesrelated to the driving system of the vehicle in accordance with variouskinds of programs. For example, the driving system control unit 12010functions as a control device for a driving force generating device forgenerating the driving force of the vehicle, such as an internalcombustion engine, a driving motor, or the like, a driving forcetransmitting mechanism for transmitting the driving force to wheels, asteering mechanism for adjusting the steering angle of the vehicle, abraking device for generating the braking force of the vehicle, and thelike.

The body system control unit 12020 controls the operation of variouskinds of devices provided to a vehicle body in accordance with variouskinds of programs. For example, the body system control unit 12020functions as a control device for a keyless entry system, a smart keysystem, a power window device, or various kinds of lamps such as aheadlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or thelike. In this case, radio waves transmitted from a mobile device as analternative to a key or signals of various kinds of switches can beinput to the body system control unit 12020. The body system controlunit 12020 receives these input radio waves or signals, and controls adoor lock device, the power window device, the lamps, or the like of thevehicle.

The outside-vehicle information detecting unit 12030 detects informationabout the outside of the vehicle including the vehicle control system12000. For example, the outside-vehicle information detecting unit 12030is connected with an imaging section 12031. The outside-vehicleinformation detecting unit 12030 makes the imaging section 12031 imagean image of the outside of the vehicle, and receives the imaged image.On the basis of the received image, the outside-vehicle informationdetecting unit 12030 may perform processing of detecting an object suchas a human, a vehicle, an obstacle, a sign, a character on a roadsurface, or the like, or processing of detecting a distance thereto.

The imaging section 12031 is an optical sensor that receives light, andwhich outputs an electric signal corresponding to a received lightamount of the light. The imaging section 12031 can output the electricsignal as an image, or can output the electric signal as informationabout a measured distance. In addition, the light received by theimaging section 12031 may be visible light, or may be invisible lightsuch as infrared rays or the like.

The in-vehicle information detecting unit 12040 detects informationabout the inside of the vehicle. The in-vehicle information detectingunit 12040 is, for example, connected with a driver state detectingsection 12041 that detects the state of a driver. The driver statedetecting section 12041, for example, includes a camera that images thedriver. On the basis of detection information input from the driverstate detecting section 12041, the in-vehicle information detecting unit12040 may calculate a degree of fatigue of the driver or a degree ofconcentration of the driver, or may determine whether the driver isdozing.

The microcomputer 12051 can calculate a control target value for thedriving force generating device, the steering mechanism, or the brakingdevice on the basis of the information about the inside or outside ofthe vehicle which information is obtained by the outside-vehicleinformation detecting unit 12030 or the in-vehicle information detectingunit 12040, and output a control command to the driving system controlunit 12010. For example, the microcomputer 12051 can perform cooperativecontrol intended to implement functions of an advanced driver assistancesystem (ADAS) which functions include collision avoidance or shockmitigation for the vehicle, following driving based on a followingdistance, vehicle speed maintaining driving, a warning of collision ofthe vehicle, a warning of deviation of the vehicle from a lane, or thelike.

In addition, the microcomputer 12051 can perform cooperative controlintended for automatic driving, which makes the vehicle to travelautonomously without depending on the operation of the driver, or thelike, by controlling the driving force generating device, the steeringmechanism, the braking device, or the like on the basis of theinformation about the outside or inside of the vehicle which informationis obtained by the outside-vehicle information detecting unit 12030 orthe in-vehicle information detecting unit 12040.

In addition, the microcomputer 12051 can output a control command to thebody system control unit 12020 on the basis of the information about theoutside of the vehicle which information is obtained by theoutside-vehicle information detecting unit 12030. For example, themicrocomputer 12051 can perform cooperative control intended to prevent(or alternatively, reduce) glare by controlling the headlamp so as tochange from a high beam to a low beam, for example, in accordance withthe position of a preceding vehicle or an oncoming vehicle detected bythe outside-vehicle information detecting unit 12030.

The sound/image output section 12052 transmits an output signal of atleast one of a sound and an image to an output device capable ofvisually or auditorily notifying information to an occupant of thevehicle or the outside of the vehicle. In the example of FIG. 10, anaudio speaker 12061, a display section 12062, and an instrument panel12063 are illustrated as the output device. The display section 12062may, for example, include at least one of an on-board display and ahead-up display.

FIG. 11 is a diagram depicting an example of the installation positionof the imaging section 12031.

In FIG. 11, the imaging section 12031 includes imaging sections 12101,12102, 12103, 12104, and 12105.

The imaging sections 12101, 12102, 12103, 12104, and 12105 are, forexample, disposed at positions on a front nose, sideview mirrors, a rearbumper, and a back door of the vehicle 12100 as well as a position on anupper portion of a windshield within the interior of the vehicle. Theimaging section 12101 provided to the front nose and the imaging section12105 provided to the upper portion of the windshield within theinterior of the vehicle obtain mainly an image of the front of thevehicle 12100. The imaging sections 12102 and 12103 provided to thesideview mirrors obtain mainly an image of the sides of the vehicle12100. The imaging section 12104 provided to the rear bumper or the backdoor obtains mainly an image of the rear of the vehicle 12100. Theimaging section 12105 provided to the upper portion of the windshieldwithin the interior of the vehicle is used mainly to detect a precedingvehicle, a pedestrian, an obstacle, a signal, a traffic sign, a lane, orthe like.

Incidentally, FIG. 11 depicts an example of photographing ranges of theimaging sections 12101 to 12104. An imaging range 12111 represents theimaging range of the imaging section 12101 provided to the front nose.Imaging ranges 12112 and 12113 respectively represent the imaging rangesof the imaging sections 12102 and 12103 provided to the sideviewmirrors. An imaging range 12114 represents the imaging range of theimaging section 12104 provided to the rear bumper or the back door. Abird's-eye image of the vehicle 12100 as viewed from above is obtainedby super-imposing image data imaged by the imaging sections 12101 to12104, for example.

At least one of the imaging sections 12101 to 12104 may have a functionof obtaining distance information. For example, at least one of theimaging sections 12101 to 12104 may be a stereo camera constituted of aplurality of imaging elements, or may be an imaging element havingpixels for phase difference detection.

For example, the microcomputer 12051 can determine a distance to eachthree-dimensional object within the imaging ranges 12111 to 12114 and atemporal change in the distance (relative speed with respect to thevehicle 12100) on the basis of the distance information obtained fromthe imaging sections 12101 to 12104, and thereby extract, as a precedingvehicle, a nearest three-dimensional object in particular that ispresent on a traveling path of the vehicle 12100 and which travels insubstantially the same direction as the vehicle 12100 at a predeterminedspeed (for example, equal to or more than 0 km/hour). Further, themicrocomputer 12051 can set a following distance to be maintained infront of a preceding vehicle in advance, and perform automatic brakecontrol (including following stop control), automatic accelerationcontrol (including following start control), or the like. It is thuspossible to perform cooperative control intended for automatic drivingthat makes the vehicle travel autonomously without depending on theoperation of the driver or the like.

For example, the microcomputer 12051 can classify three-dimensionalobject data on three-dimensional objects into three-dimensional objectdata of a two-wheeled vehicle, a standard-sized vehicle, a large-sizedvehicle, a pedestrian, a utility pole, and other three-dimensionalobjects on the basis of the distance information obtained from theimaging sections 12101 to 12104, extract the classifiedthree-dimensional object data, and use the extracted three-dimensionalobject data for automatic avoidance of an obstacle. For example, themicrocomputer 12051 identifies obstacles around the vehicle 12100 asobstacles that the driver of the vehicle 12100 can recognize visuallyand obstacles that are difficult for the driver of the vehicle 12100 torecognize visually. Then, the microcomputer 12051 determines a collisionrisk indicating a risk of collision with each obstacle. In a situationin which the collision risk is equal to or higher than a set value andthere is thus a possibility of collision, the microcomputer 12051outputs a warning to the driver via the audio speaker 12061 or thedisplay section 12062, and performs forced deceleration or avoidancesteering via the driving system control unit 12010. The microcomputer12051 can thereby assist in driving to avoid collision.

At least one of the imaging sections 12101 to 12104 may be an infraredcamera that detects infrared rays. The microcomputer 12051 can, forexample, recognize a pedestrian by determining whether or not there is apedestrian in imaged images of the imaging sections 12101 to 12104. Suchrecognition of a pedestrian is, for example, performed by a procedure ofextracting characteristic points in the imaged images of the imagingsections 12101 to 12104 as infrared cameras and a procedure ofdetermining whether or not it is the pedestrian by performing patternmatching processing on a series of characteristic points representingthe contour of the object. When the microcomputer 12051 determines thatthere is a pedestrian in the imaged images of the imaging sections 12101to 12104, and thus recognizes the pedestrian, the sound/image outputsection 12052 controls the display section 12062 so that a squarecontour line for emphasis is displayed so as to be superimposed on therecognized pedestrian. The sound/image output section 12052 may alsocontrol the display section 12062 so that an icon or the likerepresenting the pedestrian is displayed at a desired position.

In the foregoing, the description has been given of one example of thevehicle control system, to which the technology according to anembodiment of the present disclosure is applicable. The technologyaccording to an embodiment of the present disclosure may be applied to,for example, the imaging section 12031 among components of theconfiguration described above. Specifically, the solid-state imagingdevice 101 or any other solid-state imaging device illustrated in FIG. 1and other drawings may be applied to the imaging section 12031. Asuperior operation of the vehicle control system is expectable byapplication of the technology according to an embodiment of the presentdisclosure to the imaging section 12031.

5. Other Modification Examples

Although the description has been given with reference to someembodiments and some modification examples, the present disclosure isnot limited thereto, and may be modified in a variety of ways. Forexample, in the foregoing embodiment, the case where one pixel groupincludes four pixels arranged in a two row-by-two column squarearrangement, that is, the case of m=2 has been described as an example;however, in the present disclosure, m may be three or more. Moreover, inthe foregoing embodiment and modification examples, the case where thefirst dimension in the first direction and the second dimension in thesecond direction in each of the pixel groups are substantially equal hasbeen described as an example; however, in an embodiment of the presentdisclosure, the first dimension and the second dimension may bedifferent from each other.

Further, in the foregoing embodiment and modification examples, a casewhere the imaging element outputs a color image has been described;however, an imaging element according to an embodiment of the presentdisclosure may output a monochrome image.

Furthermore, in the foregoing embodiment and modification examples, thecase of n=2 has been exemplified in FIG. 3 and FIGS. 5 to 8, forexample; however, m may be three or more in an embodiment of the presentdisclosure.

Moreover, in the foregoing embodiment and modification examples, in thecase where attention is focused on a certain pixel group in the pixelarray unit, other pixel groups are moved by X/n or Y/n toward theclockwise direction with the certain pixel group as a center; however,the present disclosure is not limited thereto. For example, in the casewhere attention is focused on the certain pixel group in the pixel arrayunit, other pixel groups may be moved by X/n or Y/n toward acounterclockwise direction with the certain pixel group as a center.

Further, in an imaging element according to an embodiment of the presentdisclosure, for example, as with a pixel array unit 111E according to afifth modification example illustrated in FIG. 12, the MEM 59 in thepixel circuit may be disposed in the gap region GR. This makes itpossible to increase an area in an XY plane of the MEM 59, as comparedwith a case where the MEM 59 is provided in a region superposed in athickness direction on the PD 51, and to increase a capacity of the MEM59. It is to be noted that it is sufficient if in place of the colorfilter CF, a light-blocking layer SS is provided in the gap region GRwhere the MEM 59 is provided.

Furthermore, in an imaging element according to an embodiment of thepresent disclosure, for example, as with a pixel array unit 111Faccording to a sixth modification example illustrated in FIG. 13, theAMP 55 in the pixel circuit may be provided in the gap region GR. Thismakes it possible to increase an area in the XY plane of the AMP 55, ascompared with the case where the AMP 55 is provided in a regionsuperposed in the thickness direction on the PD 51, and to reduce randomnoise.

Moreover, in an imaging element according to an embodiment of thepresent disclosure, for example, as with a pixel array unit 111Gaccording to a seventh modification example illustrated in FIG. 14, theOFG 58 in the pixel circuit may be provided in the gap region GR. Thismakes it possible to suppress blooming between different colors. It isto be noted that a configuration according to the sixth modificationexample illustrated in FIG. 13 and a configuration according to theseventh modification example illustrated in FIG. 14 may be combined.

Further, in the foregoing embodiment, the global shutter systemsolid-state imaging element has been described as an example; however,an imaging element according to an embodiment of the present disclosureis not limited thereto. For example, as with a pixel circuit 110A and apixel array unit 111H according to an eighth modification exampleillustrated in FIGS. 16 and 17, an imaging element according to anembodiment of the present disclosure may include one transfer transistor52 in place of the TG 52A and the TG 52B, and may not include the MEM59.

As described above, the imaging element and the electronic apparatusaccording to the embodiment of the present disclosure are suitable toenhance resolution. It is to be noted that the effects achieved by thepresent disclosure are not limited thereto, and may include any ofeffects described below. Moreover, the present technology may have thefollowing configurations.

(1) An imaging device, comprising:

a first pixel group including:

first photoelectric conversion regions; and

at least one first color filter on the first photoelectric conversionregions;

a second pixel group including:

second photoelectric conversion regions; and

at least one second color filter on the second photoelectric conversionregions;

a dummy region between the first pixel group and the second pixel groupin a first direction so that a first side of the dummy region isadjacent to the first pixel group and a second side of the dummy regionis adjacent to the second pixel group.

(2)

The imaging device of (1), wherein the dummy region is a same size asone pixel in the first pixel group or the second pixel group.

(3)

The imaging device of one or more of (1) to (2), wherein the dummyregion does not have a color filter.

(4)

The imaging device of one or more of (1) to (3), wherein the dummyregion is an infrared detection region that detects infrared light, aphase difference detection region that detects a phase difference, or adistance detection region that detects distance.

(5)

The imaging device of one or more of (1) to (4), wherein the secondpixel group is offset from the first pixel group in a second directionperpendicular to the first direction.

(6)

The imaging device of one or more of (1) to (5), wherein the secondpixel group is offset from the first pixel group by a distance X/n,where X is a dimension of the first pixel group in the first directionand n is a natural number of at least two.

(7)

The imaging device of one or more of (1) to (6), wherein the first pixelgroup includes a first 2×2 array of pixels, and the second pixel groupincludes a second 2×2 array of pixels.

(8)

The imaging device of one or more of (1) to (7), further comprising:

a third pixel group adjacent to a third side of the dummy region, thethird pixel group including;

third photoelectric conversion regions; and

at least one third color filter on the third photoelectric conversionregions; and

a fourth pixel group adjacent to a fourth side of the dummy region, thefourth pixel group including:

fourth photoelectric conversion regions; and

at least one fourth color filter on the fourth photoelectric conversionregions.

(9)

The imaging device of one or more of (1) to (8), wherein the first,second, third, and fourth pixel groups are arranged such that the dummyregion is surrounded by the first, second, third, and fourth pixelgroups.

(10)

The imaging device of one or more of (1) to (9), wherein the at leastone third color filter and the at least one fourth color filter pass asame range of wavelengths of light.

(11)

The imaging device of one or more of (1) to (10), wherein the first sideand the second side of the dummy region are opposite sides, and whereinthe third side and the fourth side of the dummy region are oppositesides.

(12)

The imaging device of one or more of (1) to (11), wherein each pixel inthe first, second, third, and fourth pixel groups includes a memory anda floating diffusion coupled to the memory.

(13)

The imaging device of one or more of (1) to (12), further comprising:

an isolation region between each pixel in the first and second pixelgroups.

(14)

The imaging device of one or more of (1) to (13), wherein the firstphotoelectric conversion regions and the second photoelectric conversionregions are disposed in a substrate, and wherein the isolation regionpenetrates a first surface of the substrate and is surrounded by aportion of the substrate having a different conductivity type than thefirst and second photoelectric conversion regions.

(15)

An imaging device, comprising:

a dummy pixel;

a first pixel group;

a second pixel group;

a third pixel group; and

a fourth pixel group, wherein the first, second, third, and fourth pixelgroups surround the dummy pixel.

(16)

The imaging device of one or more (15), wherein each of the first,second, third, and fourth pixel groups includes a 2×2 array of pixels.

(17)

The imaging device of one or more of (15) to (16), wherein each pixelgroup has a respective color filter that passes green, red, or bluelight.

(18)

The imaging device of one or more of (15) to (17), wherein the dummypixel does not have a color filter.

(19)

The imaging device of one or more of (15) to (18), further comprising:

a substrate including photoelectric conversion regions of each pixel;

a memory disposed in the substrate; and

a wiring layer on one side of the substrate and including at least onetransistor coupled to the memory.

(20)

An imaging device, comprising:

a plurality of pixel groups; and

a plurality of dummy regions interspersed amongst the plurality of pixelgroups such that each side of each dummy region is adjacent to one pixelin each pixel group.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

REFERENCE SIGNS LIST

-   -   1 to 4 first to fourth pixels    -   5 white pixel    -   6 near-infrared light detection pixel    -   7 image plane phase detection pixel    -   8 distance-measuring pixel    -   11 semiconductor substrate    -   12 wiring layer    -   13 element separator    -   14 P-type semiconductor region    -   15 fixed charge film    -   18 insulation layer    -   51 photoelectric converter (PD)    -   52A, 52B transfer transistor (TG)    -   53 charge-to-voltage converter (FD)    -   54 reset transistor (RST)    -   55 amplification transistor (AMP)    -   56 select transistor (SEL)    -   58 discharging transistor (OFG)    -   59 charge holding unit (MEM)    -   101 solid-state imaging element    -   110 sensor pixel    -   111 pixel array unit    -   112 vertical driver    -   113 column signal processor    -   114 horizontal driver    -   115 system controller    -   116 pixel drive line    -   117 vertical signal line (VSL)    -   118 signal processor    -   119 data storage unit    -   G1 to G4 first to fourth pixel groups    -   GR gap region

What is claimed is:
 1. An imaging device, comprising: a first pixel group including: first photoelectric conversion regions; and at least one first color filter on the first photoelectric conversion regions; a second pixel group including: second photoelectric conversion regions; and at least one second color filter on the second photoelectric conversion regions; and a dummy region between the first pixel group and the second pixel group in a first direction so that a first side of the dummy region is adjacent to the first pixel group and a second side of the dummy region is adjacent to the second pixel group.
 2. The imaging device of claim 1, wherein the dummy region is a same size as one pixel in the first pixel group or the second pixel group.
 3. The imaging device of claim 1, wherein the dummy region does not have a color filter.
 4. The imaging device of claim 1, wherein the dummy region is an infrared detection region that detects infrared light, a phase difference detection region that detects a phase difference, or a distance detection region that detects distance.
 5. The imaging device of claim 1, wherein the second pixel group is offset from the first pixel group in a second direction perpendicular to the first direction.
 6. The imaging device of claim 5, wherein the second pixel group is offset from the first pixel group by a distance X/n, where X is a dimension of the first pixel group in the first direction and n is a natural number of at least two.
 7. The imaging device of claim 6, wherein the first pixel group includes a first 2×2 array of pixels, and the second pixel group includes a second 2×2 array of pixels.
 8. The imaging device of claim 5, further comprising: a third pixel group adjacent to a third side of the dummy region, the third pixel group including; third photoelectric conversion regions; and at least one third color filter on the third photoelectric conversion regions; and a fourth pixel group adjacent to a fourth side of the dummy region, the fourth pixel group including: fourth photoelectric conversion regions; and at least one fourth color filter on the fourth photoelectric conversion regions.
 9. The imaging device of claim 8, wherein the first, second, third, and fourth pixel groups are arranged such that the dummy region is surrounded by the first, second, third, and fourth pixel groups.
 10. The imaging device of claim 9, wherein the at least one third color filter and the at least one fourth color filter pass a same range of wavelengths of light.
 11. The imaging device of claim 10, wherein the first side and the second side of the dummy region are opposite sides, and wherein the third side and the fourth side of the dummy region are opposite sides.
 12. The imaging device of claim 1, wherein each pixel in the first, second, third, and fourth pixel groups includes a memory and a floating diffusion coupled to the memory.
 13. The imaging device of claim 12, further comprising: an isolation region between each pixel in the first and second pixel groups.
 14. The imaging device of claim 13, wherein the first photoelectric conversion regions and the second photoelectric conversion regions are disposed in a substrate, and wherein the isolation region penetrates a first surface of the substrate and is surrounded by a portion of the substrate having a different conductivity type than the first and second photoelectric conversion regions.
 15. An imaging device, comprising: a dummy pixel; a first pixel group; a second pixel group; a third pixel group; and a fourth pixel group, wherein the first, second, third, and fourth pixel groups surround the dummy pixel.
 16. The imaging device of claim 15, wherein each of the first, second, third, and fourth pixel groups includes a 2×2 array of pixels.
 17. The imaging device of claim 16, wherein each pixel group has a respective color filter that passes green, red, or blue light.
 18. The imaging device of claim 17, wherein the dummy pixel does not have a color filter.
 19. The imaging device of claim 16, further comprising: a substrate including photoelectric conversion regions of each pixel; a memory disposed in the substrate; and a wiring layer on one side of the substrate and including at least one transistor coupled to the memory.
 20. An imaging device, comprising: a plurality of pixel groups; and a plurality of dummy regions interspersed amongst the plurality of pixel groups such that each side of each dummy region is adjacent to one pixel in each pixel group. 